Characterization of the EuZrO3/KTaO3 Interface: Tunable Carrier Density and Long-Range Spin Transport

Xiangyang Wei, Shuanhu Wang, Jiaxin Lv, Huapei Zhu, Hong Yan, Kexin Jin

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摘要

Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.

源语言英语
页(从-至)2006-2012
页数7
期刊ACS Applied Nano Materials
8
4
DOI
出版状态已出版 - 31 1月 2025

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