TY - JOUR
T1 - Characterization of the EuZrO3/KTaO3 Interface
T2 - Tunable Carrier Density and Long-Range Spin Transport
AU - Wei, Xiangyang
AU - Wang, Shuanhu
AU - Lv, Jiaxin
AU - Zhu, Huapei
AU - Yan, Hong
AU - Jin, Kexin
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/1/31
Y1 - 2025/1/31
N2 - Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.
AB - Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.
KW - EuZrO/KTaO interface
KW - fabrication condition
KW - Hall mobility
KW - magnetotransport properties
KW - oxide interfaces
KW - two-dimensional electron gas
UR - http://www.scopus.com/inward/record.url?scp=85215854447&partnerID=8YFLogxK
U2 - 10.1021/acsanm.4c06643
DO - 10.1021/acsanm.4c06643
M3 - 文章
AN - SCOPUS:85215854447
SN - 2574-0970
VL - 8
SP - 2006
EP - 2012
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 4
ER -