A State-of-the-Art Review of Through-Silicon Vias: Filling Materials, Filling Processes, Performance, and Integration

Qianfu Xia, Xinrui Zhang, Binghe Ma, Kai Tao, Hemin Zhang, Weizheng Yuan, Seeram Ramakrishna, Tao Ye

科研成果: 期刊稿件文献综述同行评审

3 引用 (Scopus)

摘要

Through-silicon via (TSV) technology realizes high-density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi-functionality in post-Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi-physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.

源语言英语
文章编号2401799
期刊Advanced Engineering Materials
27
1
DOI
出版状态已出版 - 1月 2025

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