TY - JOUR
T1 - A State-of-the-Art Review of Through-Silicon Vias
T2 - Filling Materials, Filling Processes, Performance, and Integration
AU - Xia, Qianfu
AU - Zhang, Xinrui
AU - Ma, Binghe
AU - Tao, Kai
AU - Zhang, Hemin
AU - Yuan, Weizheng
AU - Ramakrishna, Seeram
AU - Ye, Tao
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2025/1
Y1 - 2025/1
N2 - Through-silicon via (TSV) technology realizes high-density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi-functionality in post-Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi-physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.
AB - Through-silicon via (TSV) technology realizes high-density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi-functionality in post-Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi-physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.
KW - 3D packaging
KW - MEMS
KW - microelectronics
KW - semiconductor manufacturing
KW - through-silicon vias
UR - http://www.scopus.com/inward/record.url?scp=85210760633&partnerID=8YFLogxK
U2 - 10.1002/adem.202401799
DO - 10.1002/adem.202401799
M3 - 文献综述
AN - SCOPUS:85210760633
SN - 1438-1656
VL - 27
JO - Advanced Engineering Materials
JF - Advanced Engineering Materials
IS - 1
M1 - 2401799
ER -