V-band Transceiver Based on Through Silicon Via (TSV) Technique

Yanhong Gao, Dongbo Chen, Shigang Zhou, Xilong Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A V-band three-dimensional silicon based transceiver SIP (System in Package) is presented in this paper, which is manufactured using high-precision Micro-Electro-Mechanical Systems (MEMS) technology and integrates low-loss Through-Silicon Via (TSV) vertical interconnection structures. Mixer, Low Noise Amplifier (LNA), and attenuator are contained in the receiver module while the power amplifier (PA), multiplier and attenuator are contained in the transmitter module. The size of the transmitter and receiver modules are 10×10×1mm3 and 12×11×1mm3 respectively. Measured results show that both the transmitter and receiver can cover the bandwidth of 59-62GHz with VSWR less than 2.0. The receiver gain can be up to 35dB and the transmitter out put power can be more than 15dBm in the frequency band.

Original languageEnglish
Title of host publication2024 IEEE 7th International Conference on Electronic Information and Communication Technology, ICEICT 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages378-380
Number of pages3
ISBN (Electronic)9798350384437
DOIs
StatePublished - 2024
Event7th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2024 - Xi'an, China
Duration: 31 Jul 20242 Aug 2024

Publication series

Name2024 IEEE 7th International Conference on Electronic Information and Communication Technology, ICEICT 2024

Conference

Conference7th IEEE International Conference on Electronic Information and Communication Technology, ICEICT 2024
Country/TerritoryChina
CityXi'an
Period31/07/242/08/24

Keywords

  • Micro-Electro-Mechanical Systems (MEMS)
  • System-in-Package (SiP)
  • V-band

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