INFLUENCE of SUBSTRATE TEMPERATURE on the COMPOSITION, ELECTRICAL RESISTIVITY and INFRARED EMISSIVITY of PtO x FILMS

Wenbo Kang; Dongmei Zhu; Xiaoke Lu; Zhibin Huang; Wancheng Zhou; Fa Luo

doi:10.1142/S0218625X19500562

INFLUENCE of SUBSTRATE TEMPERATURE on the COMPOSITION, ELECTRICAL RESISTIVITY and INFRARED EMISSIVITY of PtO _x FILMS

Wenbo Kang, Dongmei Zhu, Xiaoke Lu, Zhibin Huang, Wancheng Zhou, Fa Luo

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

PtO_x films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O₂ mixture atmosphere at substrate temperatures ranging from 200°C to 400°C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtO_x films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtO_x films were mainly composed of PtO and PtO₂ phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

Original language	English
Article number	1950056
Journal	Surface Review and Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1142/S0218625X19500562
State	Published - 1 Nov 2019

Keywords

infrared emissivity
PtO films
reactive sputtering
resistivity
substrate temperature

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10.1142/S0218625X19500562

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title = "INFLUENCE of SUBSTRATE TEMPERATURE on the COMPOSITION, ELECTRICAL RESISTIVITY and INFRARED EMISSIVITY of PtO x FILMS",

abstract = "PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200°C to 400°C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.",

keywords = "infrared emissivity, PtO films, reactive sputtering, resistivity, substrate temperature",

author = "Wenbo Kang and Dongmei Zhu and Xiaoke Lu and Zhibin Huang and Wancheng Zhou and Fa Luo",

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doi = "10.1142/S0218625X19500562",

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T1 - INFLUENCE of SUBSTRATE TEMPERATURE on the COMPOSITION, ELECTRICAL RESISTIVITY and INFRARED EMISSIVITY of PtO x FILMS

AU - Kang, Wenbo

AU - Zhu, Dongmei

AU - Lu, Xiaoke

AU - Huang, Zhibin

AU - Zhou, Wancheng

AU - Luo, Fa

PY - 2019/11/1

Y1 - 2019/11/1

N2 - PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200°C to 400°C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

AB - PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200°C to 400°C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

KW - infrared emissivity

KW - PtO films

KW - reactive sputtering

KW - resistivity

KW - substrate temperature

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DO - 10.1142/S0218625X19500562

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SN - 0218-625X

VL - 26

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 9

M1 - 1950056

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INFLUENCE of SUBSTRATE TEMPERATURE on the COMPOSITION, ELECTRICAL RESISTIVITY and INFRARED EMISSIVITY of PtO _x FILMS

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Keywords

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