Defect proliferation in CsPbBr3 crystal induced by ion migration

Bin Bin Zhang; Fangbao Wang; Hongjian Zhang; Bao Xiao; Qihao Sun; Jun Guo; Ahmed Ben Hafsia; Aihui Shao; Yadong Xu; Jian Zhou

doi:10.1063/1.5134108

Defect proliferation in CsPbBr₃ crystal induced by ion migration

Bin Bin Zhang, Fangbao Wang, Hongjian Zhang, Bao Xiao, Qihao Sun, Jun Guo, Ahmed Ben Hafsia, Aihui Shao, Yadong Xu, Jian Zhou

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Ion migration in halide perovskite materials usually brings an intractable problem in the working stability of solar cells and photoelectrical detectors. The mechanism of ion migration and its impact on physical properties are still open questions. In this work, the ion migration behavior in solution-grown CsPbBr₃ crystals was observed by the hysteresis in current-voltage curves and the temperature dependent reversed current-time measurements. Defect proliferation phenomena (new defects of [V_Cs]^- and [Pb_Br]²⁺) originating from ion migration were verified by thermally stimulated current spectroscopy. Our results also give evidence that Cs⁺ ions also participate in the process of ion migration except the widely considered Br^- ions. Furthermore, the photoelectric properties of the CsPbBr₃ device were found to be seriously deteriorated after the ion migration. Our work demonstrates the strong correlation between the ion migration and physical properties in halide perovskites.

Original language	English
Article number	063505
Journal	Applied Physics Letters
Volume	116
Issue number	6
DOIs	https://doi.org/10.1063/1.5134108
State	Published - 10 Feb 2020

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title = "Defect proliferation in CsPbBr3 crystal induced by ion migration",

abstract = "Ion migration in halide perovskite materials usually brings an intractable problem in the working stability of solar cells and photoelectrical detectors. The mechanism of ion migration and its impact on physical properties are still open questions. In this work, the ion migration behavior in solution-grown CsPbBr3 crystals was observed by the hysteresis in current-voltage curves and the temperature dependent reversed current-time measurements. Defect proliferation phenomena (new defects of [VCs]- and [PbBr]2+) originating from ion migration were verified by thermally stimulated current spectroscopy. Our results also give evidence that Cs+ ions also participate in the process of ion migration except the widely considered Br- ions. Furthermore, the photoelectric properties of the CsPbBr3 device were found to be seriously deteriorated after the ion migration. Our work demonstrates the strong correlation between the ion migration and physical properties in halide perovskites.",

author = "Zhang, {Bin Bin} and Fangbao Wang and Hongjian Zhang and Bao Xiao and Qihao Sun and Jun Guo and Hafsia, {Ahmed Ben} and Aihui Shao and Yadong Xu and Jian Zhou",

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doi = "10.1063/1.5134108",

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T1 - Defect proliferation in CsPbBr3 crystal induced by ion migration

AU - Zhang, Bin Bin

AU - Wang, Fangbao

AU - Zhang, Hongjian

AU - Xiao, Bao

AU - Sun, Qihao

AU - Guo, Jun

AU - Hafsia, Ahmed Ben

AU - Shao, Aihui

AU - Xu, Yadong

AU - Zhou, Jian

PY - 2020/2/10

Y1 - 2020/2/10

N2 - Ion migration in halide perovskite materials usually brings an intractable problem in the working stability of solar cells and photoelectrical detectors. The mechanism of ion migration and its impact on physical properties are still open questions. In this work, the ion migration behavior in solution-grown CsPbBr3 crystals was observed by the hysteresis in current-voltage curves and the temperature dependent reversed current-time measurements. Defect proliferation phenomena (new defects of [VCs]- and [PbBr]2+) originating from ion migration were verified by thermally stimulated current spectroscopy. Our results also give evidence that Cs+ ions also participate in the process of ion migration except the widely considered Br- ions. Furthermore, the photoelectric properties of the CsPbBr3 device were found to be seriously deteriorated after the ion migration. Our work demonstrates the strong correlation between the ion migration and physical properties in halide perovskites.

AB - Ion migration in halide perovskite materials usually brings an intractable problem in the working stability of solar cells and photoelectrical detectors. The mechanism of ion migration and its impact on physical properties are still open questions. In this work, the ion migration behavior in solution-grown CsPbBr3 crystals was observed by the hysteresis in current-voltage curves and the temperature dependent reversed current-time measurements. Defect proliferation phenomena (new defects of [VCs]- and [PbBr]2+) originating from ion migration were verified by thermally stimulated current spectroscopy. Our results also give evidence that Cs+ ions also participate in the process of ion migration except the widely considered Br- ions. Furthermore, the photoelectric properties of the CsPbBr3 device were found to be seriously deteriorated after the ion migration. Our work demonstrates the strong correlation between the ion migration and physical properties in halide perovskites.

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U2 - 10.1063/1.5134108

DO - 10.1063/1.5134108

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SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063505

ER -

Defect proliferation in CsPbBr₃ crystal induced by ion migration

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