Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

Research output: Contribution to journalLetterpeer-review

Abstract

A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.

Original languageEnglish
Article number199402
JournalScience China Information Sciences
Volume67
Issue number9
DOIs
StatePublished - Sep 2024

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