Abstract
A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.
Original language | English |
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Article number | 199402 |
Journal | Science China Information Sciences |
Volume | 67 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2024 |