Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Yong Zhang; Dongxin Tan; Cizhe Fang; Zheng Dong Luo; Qiyu Yang; Qiao Zhang; Yu Zhang; Xuetao Gan; Yan Liu; Yue Hao; Genquan Han

doi:10.1007/s11432-024-4117-y

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

School of Microelectronics

Research output: Contribution to journal › Letter › peer-review

Abstract

A MoS₂ channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 10⁴ was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.

Original language	English
Article number	199402
Journal	Science China Information Sciences
Volume	67
Issue number	9
DOIs	https://doi.org/10.1007/s11432-024-4117-y
State	Published - Sep 2024

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10.1007/s11432-024-4117-y

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title = "Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic",

abstract = "A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.",

author = "Yong Zhang and Dongxin Tan and Cizhe Fang and Luo, {Zheng Dong} and Qiyu Yang and Qiao Zhang and Yu Zhang and Xuetao Gan and Yan Liu and Yue Hao and Genquan Han",

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doi = "10.1007/s11432-024-4117-y",

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T1 - Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

AU - Zhang, Yong

AU - Tan, Dongxin

AU - Fang, Cizhe

AU - Luo, Zheng Dong

AU - Yang, Qiyu

AU - Zhang, Qiao

AU - Zhang, Yu

AU - Gan, Xuetao

AU - Liu, Yan

AU - Hao, Yue

AU - Han, Genquan

PY - 2024/9

Y1 - 2024/9

N2 - A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.

AB - A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.

UR - http://www.scopus.com/inward/record.url?scp=85201826983&partnerID=8YFLogxK

U2 - 10.1007/s11432-024-4117-y

DO - 10.1007/s11432-024-4117-y

M3 - 快报

AN - SCOPUS:85201826983

SN - 1674-733X

VL - 67

JO - Science China Information Sciences

JF - Science China Information Sciences

IS - 9

M1 - 199402

ER -

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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