Annealing impact on Al/CdZnTe Schottky contact

Au and Al electrodes were deposited by thermal evaporation onto CdZnTe surfaces, the effects of annealing conditions on the properties of Al/CdZnTe contact were studied. The sample was annealed at varies temperature in the region from 100°C to 300°C for 5 min under-N ₂ ambience. Room temperature I-V and C-V characteristics of the sample annealed at different temperature were measured by Agilent 4155c Semiconductor Parameter Analyzer and Agilent 4294A impedance analyzer respectively. I-V and C-V curves shown that annealed at low temperature, the Schottky barrier height of Al/CdZnTe increases, ideal factor is close to 1, and the capacitance of the Schottky reduces for almost 50%. However, annealing at the temperature higher than 250°C, the Schottky barrier height decreases, meanwhile the ideal factor deviates from 1, and the capacitance of the Schottky is decreased for an order.