TY - GEN
T1 - A high sensitivity micromachined accelerometer with an enhanced inertial mass SOI MEMS process
AU - Xie, Jianbing
AU - Song, Meng
AU - Yuan, Weizheng
PY - 2013
Y1 - 2013
N2 - This paper provides an enhanced inertial mass SOI MEMS process for the fabrication of a high sensitivity micromachined accelerometer. In the proposed process, the handle layer of the SOI wafer is used as an enhanced inertial mass, in this way, the inertial mass of the accelerometer can increase 5-15 times. Therefore, the sensitivity of the MEMS accelerometer can be significantly increased. In this paper, an in-plane single-axis accelerometer is designed firstly. And then, the accelerometer is fabricated in a low resistivity SOI wafer with 60μm thickness device layer and 400μm thickness handle layer through the developed enhanced inertial mass SOI MEMS process. The sensitivity of the fabricated MEMS accelerometer is 2.257V/g, the linearity of output is within 0.5%, and the power spectral density of the noises is as low as 6.79uV/√Hz.
AB - This paper provides an enhanced inertial mass SOI MEMS process for the fabrication of a high sensitivity micromachined accelerometer. In the proposed process, the handle layer of the SOI wafer is used as an enhanced inertial mass, in this way, the inertial mass of the accelerometer can increase 5-15 times. Therefore, the sensitivity of the MEMS accelerometer can be significantly increased. In this paper, an in-plane single-axis accelerometer is designed firstly. And then, the accelerometer is fabricated in a low resistivity SOI wafer with 60μm thickness device layer and 400μm thickness handle layer through the developed enhanced inertial mass SOI MEMS process. The sensitivity of the fabricated MEMS accelerometer is 2.257V/g, the linearity of output is within 0.5%, and the power spectral density of the noises is as low as 6.79uV/√Hz.
KW - enhanced inertial mass
KW - high sensitivity
KW - micromachined accelerometer
KW - SOI
UR - http://www.scopus.com/inward/record.url?scp=84883108549&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2013.6559745
DO - 10.1109/NEMS.2013.6559745
M3 - 会议稿件
AN - SCOPUS:84883108549
SN - 9781467363525
T3 - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013
SP - 336
EP - 339
BT - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013
T2 - 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013
Y2 - 7 April 2013 through 10 April 2013
ER -