TY - JOUR
T1 - Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector
AU - Du, Yuanyuan
AU - Jie, Wanqi
AU - Wang, Tao
AU - Xu, Yadong
AU - Yin, Liying
AU - Yu, Pengfei
AU - Zha, Gangqiang
PY - 2011/3/1
Y1 - 2011/3/1
N2 - CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 43×104 cm-3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10-3 cm2 V -1 and 3.0×10-5 cm2 V-1, respectively.
AB - CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Currentvoltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19×1010 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 1020 μm in diameter and within the range 1×10 43×104 cm-3 in concentration. The 241Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22×10-3 cm2 V -1 and 3.0×10-5 cm2 V-1, respectively.
KW - A1. Characterization
KW - A1. Radiation
KW - A2. Bridgman technique
KW - B1. Cadmium compounds
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=79952739573&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.11.086
DO - 10.1016/j.jcrysgro.2010.11.086
M3 - 文章
AN - SCOPUS:79952739573
SN - 0022-0248
VL - 318
SP - 1062
EP - 1066
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -