摘要
The structure and electrical properties of KTaO3 (100) single crystals through the laser irradiation have been systematically investigated. The KTaO3 single crystals after irradiation exhibit the two-dimensional conductivity, which is confirmed by the anisotropic magnetoresistance. The Hall measurements show that carrier density and mobility can reach 1014 cm−2 and 110 cm2/ Vs at 20 K by laser irradiation, respectively. Analysis indicates that there is a transition region between amorphous layer and crystalline layer, where the electron transfer accounts for the metallic conductivity. This is the joint effect of the laser-induced oxygen defect and the surface destruction of lattice. Our results provide a novel way to study and fabricate all-oxide devices.
源语言 | 英语 |
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文章编号 | 116256 |
期刊 | Scripta Materialia |
卷 | 252 |
DOI | |
出版状态 | 已出版 - 1 11月 2024 |