Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces

Hong Yan; Zhaoting Zhang; Jiaxin Lü; Jijun Yun; Shuanhu Wang; Kexin Jin

doi:10.1016/j.scriptamat.2024.116512

Transport properties of two-dimensional electron gas generated at LaAlO₃/TiO₂ bilayer interfaces

Hong Yan, Zhaoting Zhang, Jiaxin Lü, Jijun Yun, Shuanhu Wang, Kexin Jin

物理科学与技术学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO₃/TiO₂ (a-LAO/TiO₂) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO₂ layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼10¹⁴ cm^-2 and low mobility of ∼10 cm²V^-1s^-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

源语言	英语
文章编号	116512
期刊	Scripta Materialia
卷	258
DOI	https://doi.org/10.1016/j.scriptamat.2024.116512
出版状态	已出版 - 15 3月 2025

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10.1016/j.scriptamat.2024.116512

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title = "Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces",

abstract = "The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.",

keywords = "Electronic transports, Emerging interface properties, Titanium oxide, Two-dimensional electron gases",

author = "Hong Yan and Zhaoting Zhang and Jiaxin L{\"u} and Jijun Yun and Shuanhu Wang and Kexin Jin",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2025",

month = mar,

day = "15",

doi = "10.1016/j.scriptamat.2024.116512",

language = "英语",

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T1 - Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces

AU - Yan, Hong

AU - Zhang, Zhaoting

AU - Lü, Jiaxin

AU - Yun, Jijun

AU - Wang, Shuanhu

AU - Jin, Kexin

PY - 2025/3/15

Y1 - 2025/3/15

N2 - The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

AB - The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

KW - Electronic transports

KW - Emerging interface properties

KW - Titanium oxide

KW - Two-dimensional electron gases

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U2 - 10.1016/j.scriptamat.2024.116512

DO - 10.1016/j.scriptamat.2024.116512

M3 - 文章

AN - SCOPUS:85211705224

SN - 1359-6462

VL - 258

JO - Scripta Materialia

JF - Scripta Materialia

M1 - 116512

ER -

Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces

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Transport properties of two-dimensional electron gas generated at LaAlO₃/TiO₂ bilayer interfaces