Transmutation of the Crystalline Structure of β-SiC Nanowires to an Amorphous Structure Through Cu Ion Shelling

M. Rashid Khan, Samson O. Aisida, Javed Hussain, Ishaq Ahmad, Shehla Honey, Tariq Jan, M. Rauf Khan, Arshad Mahmoud, Ting kai Zhao

科研成果: 期刊稿件文章同行评审

摘要

Abstract: The amorphous structural study of silicon carbide nanowires (SiC-NWs) has drawn strenuous attention in recent years due to their worthwhile properties for wide applications, chiefly in optoelectronics. The facile transformation of crystalline SiC-NWs to amorphous defective SiC-NWs is a challenging task for their broad-scale applications. Herein, we report a fantastic strategy (by applying a 5UDH Pelletron accelerator, located at the National Centre for Physics, Islamabad, Pakistan) for Cu ion implantation (fixed at 10 MeV) on the crystalline SiC-NWs to incorporate them into an amorphous structure. For the defects study, various dose rates of Cu+ ion ranging from 5 × 1015 ions/cm2 to 5 × 1016 ions/cm2 were bombarded on SiC-NWs, and a complete transmutation to the amorphous structure of SiC-NWs under a shelling dose of 8 × 1016 ions/cm2 was observed. This work will provide a better avenue for the structural deformation blueprints of the next-generation nanomaterials. Amorphous structural transformation is explained by collision cascade effects phenomena. Graphical Abstract: [Figure not available: see fulltext.]

源语言英语
页(从-至)6671-6676
页数6
期刊Journal of Electronic Materials
49
11
DOI
出版状态已出版 - 1 11月 2020

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