摘要
Abstract: The amorphous structural study of silicon carbide nanowires (SiC-NWs) has drawn strenuous attention in recent years due to their worthwhile properties for wide applications, chiefly in optoelectronics. The facile transformation of crystalline SiC-NWs to amorphous defective SiC-NWs is a challenging task for their broad-scale applications. Herein, we report a fantastic strategy (by applying a 5UDH Pelletron accelerator, located at the National Centre for Physics, Islamabad, Pakistan) for Cu ion implantation (fixed at 10 MeV) on the crystalline SiC-NWs to incorporate them into an amorphous structure. For the defects study, various dose rates of Cu+ ion ranging from 5 × 1015 ions/cm2 to 5 × 1016 ions/cm2 were bombarded on SiC-NWs, and a complete transmutation to the amorphous structure of SiC-NWs under a shelling dose of 8 × 1016 ions/cm2 was observed. This work will provide a better avenue for the structural deformation blueprints of the next-generation nanomaterials. Amorphous structural transformation is explained by collision cascade effects phenomena. Graphical Abstract: [Figure not available: see fulltext.]
源语言 | 英语 |
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页(从-至) | 6671-6676 |
页数 | 6 |
期刊 | Journal of Electronic Materials |
卷 | 49 |
期 | 11 |
DOI | |
出版状态 | 已出版 - 1 11月 2020 |