The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

Yongsheng Liu; Nan Chai; Xiaofei Liu; Hailong Qin; Xiaowei Yin; Litong Zhang; Laifei Cheng

doi:10.1111/jace.13730

The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

Yongsheng Liu, Nan Chai, Xiaofei Liu, Hailong Qin, Xiaowei Yin, Litong Zhang, Laifei Cheng

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH₃SiCl₃-NH₃-BCl₃-H₂ could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

源语言	英语
页（从-至）	2703-2706
页数	4
期刊	Journal of the American Ceramic Society
卷	98
期	9
DOI	https://doi.org/10.1111/jace.13730
出版状态	已出版 - 1 9月 2015

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@article{59e30474f6a743fcbdb4d65dd984cd54,

title = "The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI",

abstract = "Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.",

author = "Yongsheng Liu and Nan Chai and Xiaofei Liu and Hailong Qin and Xiaowei Yin and Litong Zhang and Laifei Cheng",

note = "Publisher Copyright: {\textcopyright} 2015 The American Ceramic Society.",

year = "2015",

month = sep,

day = "1",

doi = "10.1111/jace.13730",

language = "英语",

volume = "98",

pages = "2703--2706",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "9",

}

TY - JOUR

T1 - The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

AU - Liu, Yongsheng

AU - Chai, Nan

AU - Liu, Xiaofei

AU - Qin, Hailong

AU - Yin, Xiaowei

AU - Zhang, Litong

AU - Cheng, Laifei

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

AB - Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=84942982801&partnerID=8YFLogxK

U2 - 10.1111/jace.13730

DO - 10.1111/jace.13730

M3 - 文章

AN - SCOPUS:84942982801

SN - 0002-7820

VL - 98

SP - 2703

EP - 2706

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 9

ER -

The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

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