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西北工业大学 国内
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The effect of Te dopant on the optical and electrical properties of high-resistivity AlSb crystals
Ziang Yin,
Wanqi Jie
, Xianggang Zhang,
Tao Wang
材料学院
Northwestern Polytechnical University Xian
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Chemistry
Aluminum
100%
Ambient Reaction Temperature
100%
Binding Energy
100%
Crystal Point Defect
100%
Donor
100%
Doping
100%
Doping Material
100%
Electrical Property
100%
electronics
100%
Optical Property
100%
Photocurrent
100%
Transmittance
100%
Visible Spectrum
100%
Physics
Binding Energy
100%
Dark Current
100%
Electrical Property
100%
Energy Band
100%
Optical Property
100%
Photoelectric Emission
100%
Point Defect
100%
Room Temperature
100%
Transmittance
100%
Visible Spectrum
100%
Engineering
Band Model
50%
Band Transition
50%
Binding Energy
50%
Dopants
100%
Energy Band
50%
Photocurrent
50%
Photodetection
50%
Potential Application
100%
Room Temperature
50%
Material Science
Aluminum
33%
Density
33%
Doping (Additives)
100%
Electrical Resistivity
100%
Light-Emitting Diode
33%
Optical Property
100%
Point Defect
33%