Synthesis of Low-dimensional Nano-structural GaN

GaN, a wide direct gap semiconductor, is an ideal material for the fabrication of photoelectronic devices, such as high temperature, high power and lower energy consumption electronic devices, high speed field effect transistors, UV photodetectors, blue and ultraviolet lightemitting diodes, laser diodes, etc. It is well known that the GaN with a low dimensional structure is an important subject for fundamental research and development of nanostructured materials. For this reason the synthesis and study of nanostructured GaN are the subjects of extensive research worldwide. Recent techniques for synthesizing nanostructed GaN are reported in this paper.