Study on Raman spectrum of green light-emitting semiconductor ZnTe

The effects of surface treatments on Raman spectrum of ZnTe were studied. The experiment shows that LO(Γ) character peak of ZnTe is susceptible to surface treatments. The higher the value I/H, i. e., the ratio of peak intensity to half-peak breadth for LO(Γ) peak, the better lattice perfection of ZnTe surface. After mechanical polishing, chemical polishing and oxide removing on surface, the value I/H had been increased at different degrees and the better lattice perfection had been improved gradually. At 514.5 nm laser excitation wavelength, Raman scattering spectrum of ZnTe were submerged by the micro-photoluminescence peak in range of 200-3000 cm^-1. By fitting, the band gap of ZnTe was calculated to be 2.255 eV.