Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum

CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence(PL) spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of (D⁰, X) peak and I_DAP/I_(D0,X) correlate to the lattice integrity and the density of shallow level defects, and D₂ peak is closely related to the dislocation density. Double crystal X-ray rocking curve(DCXRC) and dislocation etch pit density(EPD) are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manufactured detectors.