TY - JOUR
T1 - Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices
AU - Jian, Jiaying
AU - Chang, Honglong
AU - Vena, Arnaud
AU - Sorli, Brice
N1 - Publisher Copyright:
© 2015, Springer-Verlag Berlin Heidelberg.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - The fabrication and the performance of PMMA resistive switching device have been studied by using FR-4 (copper), PMMA (poly methyl methacrylate) and aluminum as the active anode, the solid electrolyte and the inert cathode respectively. By etching the copper surface with the acid solution [4HNO3 + 11H3PO4 (98 %) + 5CH3COOH] at 60 °C for 2 min, a good performance of Cu/PMMA/Al device, which can switch until 2300 cycles, has been realized. The spin rate for forming the PMMA coating plays a decisive role in the performance of Cu/PMMA/Al device. The best performance of the Cu/PMMA/Al device was obtained only when the spin rate of deposition of PMMA reached 4000 rpm (low thickness).
AB - The fabrication and the performance of PMMA resistive switching device have been studied by using FR-4 (copper), PMMA (poly methyl methacrylate) and aluminum as the active anode, the solid electrolyte and the inert cathode respectively. By etching the copper surface with the acid solution [4HNO3 + 11H3PO4 (98 %) + 5CH3COOH] at 60 °C for 2 min, a good performance of Cu/PMMA/Al device, which can switch until 2300 cycles, has been realized. The spin rate for forming the PMMA coating plays a decisive role in the performance of Cu/PMMA/Al device. The best performance of the Cu/PMMA/Al device was obtained only when the spin rate of deposition of PMMA reached 4000 rpm (low thickness).
UR - http://www.scopus.com/inward/record.url?scp=84952030598&partnerID=8YFLogxK
U2 - 10.1007/s00542-015-2754-6
DO - 10.1007/s00542-015-2754-6
M3 - 文章
AN - SCOPUS:84952030598
SN - 0946-7076
VL - 23
SP - 1719
EP - 1725
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 6
ER -