TY - JOUR
T1 - Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)
AU - Wang, Linghang
AU - Jie, Wanqi
PY - 2006/4/15
Y1 - 2006/4/15
N2 - The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.
AB - The photoelectronic single crystals of mercury indium telluride (MIT) have been successfully grown by vertical Bridgman method (VB) at the optimized growth conditions. The energy band gap of MIT was authenticated to be 0.73 eV. The crystal was determined through the X-ray diffraction to be defect zinc-blende structure with the space group F4̄3m. The infrared transmittance of the crystal in the region from 400 to 4000 cm-1 was determined by FT-IR to be 50-55%, which decreases gradually with the increase of wavenumber due to the lattice absorption and free carriers absorption.
KW - A1. X-ray diffraction
KW - A2. Crystal growth from melt
KW - A2. Vertical Bridgman method
KW - B2. Mercury indium telluride
KW - B2. Semiconductor materials
KW - B3. Near-infrared photovoltaic detector
UR - http://www.scopus.com/inward/record.url?scp=33645017735&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.01.002
DO - 10.1016/j.jcrysgro.2006.01.002
M3 - 文章
AN - SCOPUS:33645017735
SN - 0022-0248
VL - 290
SP - 203
EP - 206
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -
