NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

Sreyash Sarkar; Ahmed A. Elsayed; Elyes Nefzaoui; Jeremie Drevillon; Philippe Basset; Frederic Marty; Momen Anwar; Yiting Yu; Jiancun Zhao; Xichen Yuan; Zhongzhu Liang; Diaa Khalil; Yasser M. Sabry; Tarik Bourouina

doi:10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

Sreyash Sarkar, Ahmed A. Elsayed, Elyes Nefzaoui, Jeremie Drevillon, Philippe Basset, Frederic Marty, Momen Anwar, Yiting Yu, Jiancun Zhao, Xichen Yuan, Zhongzhu Liang, Diaa Khalil, Yasser M. Sabry, Tarik Bourouina

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

14 引用（Scopus）

摘要

We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

源语言	英语
主期刊名	2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
出版商	Institute of Electrical and Electronics Engineers Inc.
页	860-862
页数	3
ISBN（电子版）	9781728116105
DOI	https://doi.org/10.1109/MEMSYS.2019.8870641
出版状态	已出版 - 1月 2019
已对外发布	是
活动	32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 - Seoul, 韩国期限: 27 1月 2019 → 31 1月 2019

出版系列

姓名	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
卷	2019-January
ISSN（印刷版）	1084-6999

会议

会议	32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
国家/地区	韩国
市	Seoul
时期	27/01/19 → 31/01/19

访问文件

10.1109/MEMSYS.2019.8870641

其它文件与链接

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引用此

Sarkar, S., Elsayed, A. A., Nefzaoui, E., Drevillon, J., Basset, P., Marty, F., Anwar, M., Yu, Y., Zhao, J., Yuan, X., Liang, Z., Khalil, D., Sabry, Y. M., & Bourouina, T. (2019). NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. 在 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019 (页码 860-862). 文章 8870641 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); 卷 2019-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2019.8870641

Sarkar, Sreyash ; Elsayed, Ahmed A. ; Nefzaoui, Elyes 等. / NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 860-862 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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title = "NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source",

abstract = "We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.",

author = "Sreyash Sarkar and Elsayed, {Ahmed A.} and Elyes Nefzaoui and Jeremie Drevillon and Philippe Basset and Frederic Marty and Momen Anwar and Yiting Yu and Jiancun Zhao and Xichen Yuan and Zhongzhu Liang and Diaa Khalil and Sabry, {Yasser M.} and Tarik Bourouina",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 ; Conference date: 27-01-2019 Through 31-01-2019",

year = "2019",

month = jan,

doi = "10.1109/MEMSYS.2019.8870641",

language = "英语",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Sarkar, S, Elsayed, AA, Nefzaoui, E, Drevillon, J, Basset, P, Marty, F, Anwar, M, Yu, Y, Zhao, J, Yuan, X, Liang, Z, Khalil, D, Sabry, YM & Bourouina, T 2019, NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. 在 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019., 8870641, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 卷 2019-January, Institute of Electrical and Electronics Engineers Inc., 页码 860-862, 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019, Seoul, 韩国, 27/01/19. https://doi.org/10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. / Sarkar, Sreyash; Elsayed, Ahmed A.; Nefzaoui, Elyes 等.
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 860-862 8870641 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); 卷 2019-January).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

AU - Sarkar, Sreyash

AU - Elsayed, Ahmed A.

AU - Nefzaoui, Elyes

AU - Drevillon, Jeremie

AU - Basset, Philippe

AU - Marty, Frederic

AU - Anwar, Momen

AU - Yu, Yiting

AU - Zhao, Jiancun

AU - Yuan, Xichen

AU - Liang, Zhongzhu

AU - Khalil, Diaa

AU - Sabry, Yasser M.

AU - Bourouina, Tarik

PY - 2019/1

Y1 - 2019/1

N2 - We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

AB - We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

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DO - 10.1109/MEMSYS.2019.8870641

M3 - 会议稿件

AN - SCOPUS:85074322169

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 860

EP - 862

BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019

Y2 - 27 January 2019 through 31 January 2019

ER -

Sarkar S, Elsayed AA, Nefzaoui E, Drevillon J, Basset P, Marty F 等. NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source. 在 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 页码 860-862. 8870641. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2019.8870641

NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

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