Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

Y. Xu, L. Cheng, L. Zhang, W. Zhou

科研成果: 期刊稿件文章同行评审

34 引用 (Scopus)

指纹

探究 'Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere' 的科研主题。它们共同构成独一无二的指纹。

Material Science

Chemical Engineering

Engineering