High Power Density Micro-System of MWPT Based on GaN HEMT

This paper presents a novel micro-system scheme for microwave power transmission that can achieve high power density at the receiver end. An inverse-F class harmonic-tuned power amplifier designed using GaN HEMT devices, as well as a rectifier incorporating an on-board coupler and phase shifter, have been realized. A significant issue is that the size of the device's peripheral on-board circuitry reduces the system's power density. By introducing a pair of aligned dual-polarized antennas, the on-board coupler and phase shifter can be designed at the transmitter end, which greatly reduces the size of the receiver end and enhances the system's power density.