High breakdown voltage in La0.7Sr0.3MnO3/LaAlO3/SrTiO3heterostructures

Hafiz M. Zeeshan; Mehwish K. Butt; Shuanhu Wang; Mubashar Rafiq; Kexin Jin

doi:10.1063/5.0027247

High breakdown voltage in La_0.7Sr_0.3MnO₃/LaAlO₃/SrTiO₃heterostructures

Hafiz M. Zeeshan, Mehwish K. Butt, Shuanhu Wang, Mubashar Rafiq, Kexin Jin

物理科学与技术学院

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p-i-n junction using complex oxides La0.7Sr0.3MnO3 (LSMO), LaAlO3 (LAO), and SrTiO3 (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.

源语言	英语
文章编号	251902
期刊	Applied Physics Letters
卷	117
期	26
DOI	https://doi.org/10.1063/5.0027247
出版状态	已出版 - 28 12月 2020

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abstract = "The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p-i-n junction using complex oxides La0.7Sr0.3MnO3 (LSMO), LaAlO3 (LAO), and SrTiO3 (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.",

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AU - Zeeshan, Hafiz M.

AU - Butt, Mehwish K.

AU - Wang, Shuanhu

AU - Rafiq, Mubashar

AU - Jin, Kexin

PY - 2020/12/28

Y1 - 2020/12/28

N2 - The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p-i-n junction using complex oxides La0.7Sr0.3MnO3 (LSMO), LaAlO3 (LAO), and SrTiO3 (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.

AB - The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p-i-n junction using complex oxides La0.7Sr0.3MnO3 (LSMO), LaAlO3 (LAO), and SrTiO3 (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.

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High breakdown voltage in La0.7Sr0.3MnO3/LaAlO3/SrTiO3heterostructures

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High breakdown voltage in La_0.7Sr_0.3MnO₃/LaAlO₃/SrTiO₃heterostructures