Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi                         2                         O                         2                         Se tuned by strain

Ya Zhu; Xiaogang Wei; Yan Song; Qilin Wei; Changqing Lin; Nannan Han; Wenbo Mi; Yingchun Cheng; Wei Huang

doi:10.1016/j.jmmm.2019.02.059

Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain

Ya Zhu, Xiaogang Wei, Yan Song, Qilin Wei, Changqing Lin, Nannan Han, Wenbo Mi, Yingchun Cheng, Wei Huang

柔性电子研究院

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12 引用（Scopus）

摘要

Recently, Bi ₂ O ₂ Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics because of its stability in air, high Hall mobility and on/off ratio at room-temperature. Using first-principles calculations, we predict half-metallicity in Mn-doped monolayer Bi ₂ O ₂ Se. The magnetism enhancement from 4.0 to 6.0 µ _B and half-metal to magnetic semiconductor transition of monolayer Bi ₂ O ₂ Se are realizable by applying biaxial tensile strain. The symmetry reduction at the elastic-plastic transition is the key factor in controlling the magnetic coupling order between the Mn and the neighboring Se atoms. The results imply a possible way to achieve two-dimensional magnetic semiconductors that have great potential applications in spintronic devices.

源语言	英语
页（从-至）	73-78
页数	6
期刊	Journal of Magnetism and Magnetic Materials
卷	480
DOI	https://doi.org/10.1016/j.jmmm.2019.02.059
出版状态	已出版 - 15 6月 2019

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10.1016/j.jmmm.2019.02.059

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Zhu, Y., Wei, X., Song, Y., Wei, Q., Lin, C., Han, N., Mi, W., Cheng, Y., & Huang, W. (2019). Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain Journal of Magnetism and Magnetic Materials, 480, 73-78. https://doi.org/10.1016/j.jmmm.2019.02.059

@article{68ea1c12f2c7437196823f87668db3bd,

title = " Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi 2 O 2 Se tuned by strain ",

abstract = " Recently, Bi 2 O 2 Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics because of its stability in air, high Hall mobility and on/off ratio at room-temperature. Using first-principles calculations, we predict half-metallicity in Mn-doped monolayer Bi 2 O 2 Se. The magnetism enhancement from 4.0 to 6.0 µ B and half-metal to magnetic semiconductor transition of monolayer Bi 2 O 2 Se are realizable by applying biaxial tensile strain. The symmetry reduction at the elastic-plastic transition is the key factor in controlling the magnetic coupling order between the Mn and the neighboring Se atoms. The results imply a possible way to achieve two-dimensional magnetic semiconductors that have great potential applications in spintronic devices.",

author = "Ya Zhu and Xiaogang Wei and Yan Song and Qilin Wei and Changqing Lin and Nannan Han and Wenbo Mi and Yingchun Cheng and Wei Huang",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jun,

day = "15",

doi = "10.1016/j.jmmm.2019.02.059",

language = "英语",

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Zhu, Y, Wei, X, Song, Y, Wei, Q, Lin, C, Han, N, Mi, W, Cheng, Y & Huang, W 2019, ' Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain ', Journal of Magnetism and Magnetic Materials, 卷 480, 页码 73-78. https://doi.org/10.1016/j.jmmm.2019.02.059

Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain . / Zhu, Ya; Wei, Xiaogang; Song, Yan 等.
在: Journal of Magnetism and Magnetic Materials, 卷 480, 15.06.2019, 页码 73-78.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi 2 O 2 Se tuned by strain

AU - Zhu, Ya

AU - Wei, Xiaogang

AU - Song, Yan

AU - Wei, Qilin

AU - Lin, Changqing

AU - Han, Nannan

AU - Mi, Wenbo

AU - Cheng, Yingchun

AU - Huang, Wei

PY - 2019/6/15

Y1 - 2019/6/15

N2 - Recently, Bi 2 O 2 Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics because of its stability in air, high Hall mobility and on/off ratio at room-temperature. Using first-principles calculations, we predict half-metallicity in Mn-doped monolayer Bi 2 O 2 Se. The magnetism enhancement from 4.0 to 6.0 µ B and half-metal to magnetic semiconductor transition of monolayer Bi 2 O 2 Se are realizable by applying biaxial tensile strain. The symmetry reduction at the elastic-plastic transition is the key factor in controlling the magnetic coupling order between the Mn and the neighboring Se atoms. The results imply a possible way to achieve two-dimensional magnetic semiconductors that have great potential applications in spintronic devices.

AB - Recently, Bi 2 O 2 Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics because of its stability in air, high Hall mobility and on/off ratio at room-temperature. Using first-principles calculations, we predict half-metallicity in Mn-doped monolayer Bi 2 O 2 Se. The magnetism enhancement from 4.0 to 6.0 µ B and half-metal to magnetic semiconductor transition of monolayer Bi 2 O 2 Se are realizable by applying biaxial tensile strain. The symmetry reduction at the elastic-plastic transition is the key factor in controlling the magnetic coupling order between the Mn and the neighboring Se atoms. The results imply a possible way to achieve two-dimensional magnetic semiconductors that have great potential applications in spintronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85062026175&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2019.02.059

DO - 10.1016/j.jmmm.2019.02.059

M3 - 文章

AN - SCOPUS:85062026175

SN - 0304-8853

VL - 480

SP - 73

EP - 78

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Zhu Y, Wei X, Song Y, Wei Q, Lin C, Han N 等. Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain Journal of Magnetism and Magnetic Materials. 2019 6月 15;480:73-78. doi: 10.1016/j.jmmm.2019.02.059

Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi 2 O 2 Se tuned by strain

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Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi ₂ O ₂ Se tuned by strain