Group IIIA/IVA monochalcogenides nanosheets for ultrafast photonics

Despite extensive applications ranging from optoelectronic devices to flexible devices, two-dimensional layered materials used as ultrafast optical modulation materials have suffered from limited operation wavebands due to their intrinsic bandgap. Here, we investigate the nonlinear optical (NLO) response of group IIIA/IVA monochalcogenides XTe (X = Ga and Ge), which exhibit a remarkable saturable absorption response at a broadband wavelength. By using a liquid phase exfoliation technique, we prepare XTe nanosheets with few-layer thickness in a deionized water solvent and investigate their NLO responses at 800 nm, 1.5 μm, and 2 μm, respectively. Both GaTe and GeTe nanosheets exhibit ultrafast saturable absorption at 800 nm with 32.4 μJ (48.4 μJ) incident intensity. After preparing microfiber-based nanosheet optical modulators, their saturable absorptions are measured at 1.5 μm and 2 μm. The GaTe-SA possesses a little bit higher modulation depth (42.3% at 1.5 μm/30.7% at 2 μm) than the GeTe-SA (30.5% at 1.5 μm/8.3% at 2 μm) at two wavelengths. The lifetime of GaTe and GeTe nanosheets is measured to be 2.8 ps and 3.3 ps, respectively. In addition, we further examine their saturable absorption via incorporating them into an erbium- and a thulium-doped fiber laser system and obtain stably passively mode-locked pulse trains, respectively. The distinct NLO properties indicate a large potential of XTe nanosheets in the development of an ultrafast optical mode locker with a wideband operation wavelength.