Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors

Jie Wen, Fei Xiao, Zheng Dong Luo, Dongxin Tan, Xuetao Gan, Dawei Zhang, Zhufei Chu, Yinshui Xia, Yan Liu, Genquan Han

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Material Science