Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices

Jing Xiang, Tai Kang Wang, Qiang Zhao, Wei Huang, Cheuk Lam Ho, Wai Yeung Wong

科研成果: 期刊稿件文章同行评审

82 引用 (Scopus)

摘要

Four new conjugated ferrocene-containing poly(fluorenylethynylene)s (PFcFE1-PFcFE4) with triphenylamine, carbazole or thiophene moieties in the main chain have been designed and synthesized via a Sonogashira coupling reaction. Their structures, molecular weights, optical features, thermal properties and memory performance were well studied. Two terminal single layer devices (ITO/polymer/Al) based on PFcFE1, PFcFE2 and PFcFE3 exhibited flash memory behaviours, while PFcFE4 shared the common characteristics of the "write-once read-many times" (WORM) memory effect. These results would provide a new series of ferrocene-containing conjugated polymers with further opportunities for memory applications.

源语言英语
页(从-至)921-928
页数8
期刊Journal of Materials Chemistry C
4
5
DOI
出版状态已出版 - 7 2月 2016
已对外发布

指纹

探究 'Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices' 的科研主题。它们共同构成独一无二的指纹。

引用此