Femtosecond laser strengthening of electron-beam deposited SiO2 thin film on fused silica substrates

Kaixin Yuan; Feng Geng; Qinghua Zhang; Yaguo Li

doi:10.1016/j.tsf.2023.139959

Femtosecond laser strengthening of electron-beam deposited SiO₂ thin film on fused silica substrates

Kaixin Yuan, Feng Geng, Qinghua Zhang, Yaguo Li

Chengdu Fine Optical Engineering Research Center

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

Femtosecond laser (@1030nm, 280fs) was applied to irradiate SiO₂ thin films in the hope of improving damage resistance of films to nanosecond ultraviolet (UV) laser light (@355nm, 4ns). The optical and mechanical properties of laser strengthened SiO₂ thin films were characterized and laser-induced damage threshold (LIDT) results show that femtosecond laser irradiation can significantly improve LIDT of the films to nanosecond UV laser light from 5.45J/cm² to 28.96J/cm² by a factor of 5. Fluorescence and Fourier Transform Infrared (FTIR) spectra indicate that the LIDT improvement is attributed to the decrease in hydroxyl group's(OH) density in SiO₂ thin films resulting from femtosecond laser irradiation.

源语言	英语
文章编号	139959
期刊	Thin Solid Films
卷	780
DOI	https://doi.org/10.1016/j.tsf.2023.139959
出版状态	已出版 - 1 9月 2023
已对外发布	是

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title = "Femtosecond laser strengthening of electron-beam deposited SiO2 thin film on fused silica substrates",

abstract = "Femtosecond laser (@1030nm, 280fs) was applied to irradiate SiO2 thin films in the hope of improving damage resistance of films to nanosecond ultraviolet (UV) laser light (@355nm, 4ns). The optical and mechanical properties of laser strengthened SiO2 thin films were characterized and laser-induced damage threshold (LIDT) results show that femtosecond laser irradiation can significantly improve LIDT of the films to nanosecond UV laser light from 5.45J/cm2 to 28.96J/cm2 by a factor of 5. Fluorescence and Fourier Transform Infrared (FTIR) spectra indicate that the LIDT improvement is attributed to the decrease in hydroxyl group's(OH) density in SiO2 thin films resulting from femtosecond laser irradiation.",

keywords = "Electron-beam deposition, Femtosecond laser, Laser-induced damage threshold, Silicon dioxide, Thin film",

author = "Kaixin Yuan and Feng Geng and Qinghua Zhang and Yaguo Li",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2023.139959",

language = "英语",

volume = "780",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Femtosecond laser strengthening of electron-beam deposited SiO2 thin film on fused silica substrates

AU - Yuan, Kaixin

AU - Geng, Feng

AU - Zhang, Qinghua

AU - Li, Yaguo

PY - 2023/9/1

Y1 - 2023/9/1

N2 - Femtosecond laser (@1030nm, 280fs) was applied to irradiate SiO2 thin films in the hope of improving damage resistance of films to nanosecond ultraviolet (UV) laser light (@355nm, 4ns). The optical and mechanical properties of laser strengthened SiO2 thin films were characterized and laser-induced damage threshold (LIDT) results show that femtosecond laser irradiation can significantly improve LIDT of the films to nanosecond UV laser light from 5.45J/cm2 to 28.96J/cm2 by a factor of 5. Fluorescence and Fourier Transform Infrared (FTIR) spectra indicate that the LIDT improvement is attributed to the decrease in hydroxyl group's(OH) density in SiO2 thin films resulting from femtosecond laser irradiation.

AB - Femtosecond laser (@1030nm, 280fs) was applied to irradiate SiO2 thin films in the hope of improving damage resistance of films to nanosecond ultraviolet (UV) laser light (@355nm, 4ns). The optical and mechanical properties of laser strengthened SiO2 thin films were characterized and laser-induced damage threshold (LIDT) results show that femtosecond laser irradiation can significantly improve LIDT of the films to nanosecond UV laser light from 5.45J/cm2 to 28.96J/cm2 by a factor of 5. Fluorescence and Fourier Transform Infrared (FTIR) spectra indicate that the LIDT improvement is attributed to the decrease in hydroxyl group's(OH) density in SiO2 thin films resulting from femtosecond laser irradiation.

KW - Electron-beam deposition

KW - Femtosecond laser

KW - Laser-induced damage threshold

KW - Silicon dioxide

KW - Thin film

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U2 - 10.1016/j.tsf.2023.139959

DO - 10.1016/j.tsf.2023.139959

M3 - 文章

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SN - 0040-6090

VL - 780

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 139959

ER -

Femtosecond laser strengthening of electron-beam deposited SiO2 thin film on fused silica substrates

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Femtosecond laser strengthening of electron-beam deposited SiO₂ thin film on fused silica substrates