TY - JOUR
T1 - Enhanced Performance of Weak Magnetic Field Sensor Based on Laminated Cantilever
T2 - Theoretical Analysis and Experimental Verification
AU - Keli, Zhao
AU - Peng, Pang
AU - Binghe, Ma
AU - Xingxu, Zhang
AU - Jian, Luo
AU - Tao, Ye
AU - Zhonggang, Zhang
AU - Guangyao, Pei
AU - Yunzhe, Liu
AU - Tao, Zhang
AU - Wei, Gao
AU - Jinjun, Deng
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2023/5/15
Y1 - 2023/5/15
N2 - The present study introduces a weak magnetic field sensor that utilizes a laminated cantilever structure, consisting of a magnetostrictive layer, a piezoelectric layer, and a substrate layer. Consequently, the transformation from the magnetic signal to the electrical signal is accomplished through the consistent mechanical stress in both layers. A comprehensive theoretical model has been developed to evaluate the impact of key structural parameters on the magnetoelectric (ME) sensing performance, enabling the optimization of the device design. By incorporating vanadium (V) as a dopant element, a Zn-V-O film with a piezoelectric coefficient as high as 35 pm/V is fulfilled. Furthermore, the high piezomagnetic properties of Galfenol make it a suitable candidate as a magnetostrictive layer. Sensor prototypes were fabricated for experimental verification through the utilization of MEMS technology. The film was characterized using techniques, such as X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and piezoelectric force microscopy (PFM). The ME testing experiments indicated that the magnetostrictive coefficient could achieve about 9.32 kV/cm at resonant frequencies for sensors with varying lengths and a 20- m -thick Si substrate. The proposed sensor exhibits promising potential for improving weak magnetic field detection performance.
AB - The present study introduces a weak magnetic field sensor that utilizes a laminated cantilever structure, consisting of a magnetostrictive layer, a piezoelectric layer, and a substrate layer. Consequently, the transformation from the magnetic signal to the electrical signal is accomplished through the consistent mechanical stress in both layers. A comprehensive theoretical model has been developed to evaluate the impact of key structural parameters on the magnetoelectric (ME) sensing performance, enabling the optimization of the device design. By incorporating vanadium (V) as a dopant element, a Zn-V-O film with a piezoelectric coefficient as high as 35 pm/V is fulfilled. Furthermore, the high piezomagnetic properties of Galfenol make it a suitable candidate as a magnetostrictive layer. Sensor prototypes were fabricated for experimental verification through the utilization of MEMS technology. The film was characterized using techniques, such as X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and piezoelectric force microscopy (PFM). The ME testing experiments indicated that the magnetostrictive coefficient could achieve about 9.32 kV/cm at resonant frequencies for sensors with varying lengths and a 20- m -thick Si substrate. The proposed sensor exhibits promising potential for improving weak magnetic field detection performance.
KW - Doped zinc oxide
KW - high ME coefficient
KW - magnetoelectric (ME) cantilever
KW - MEMS
KW - weak magnetic field sensor
UR - http://www.scopus.com/inward/record.url?scp=85153346720&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2023.3264462
DO - 10.1109/JSEN.2023.3264462
M3 - 文章
AN - SCOPUS:85153346720
SN - 1530-437X
VL - 23
SP - 10350
EP - 10358
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 10
ER -