Effects of electrodes on the filament formation in HfO2-based resistive random access memory

Tingting Tan; Tingting Guo; Xiaojing Li; Xi Chen; Liping Feng; Zhengtang Liu

Effects of electrodes on the filament formation in HfO₂-based resistive random access memory

Tingting Tan, Tingting Guo, Xiaojing Li, Xi Chen, Liping Feng, Zhengtang Liu

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The resistance switching characteristics of HfO₂-based resistive random access memory (RRAM) with Cu/HfO₂/ITO and TiN/HfO₂/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO₂/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO₂ film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO₂/ITO device.

源语言	英语
页（从-至）	2642-2645
页数	4
期刊	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
卷	44
期	11
出版状态	已出版 - 1 11月 2015

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引用此

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title = "Effects of electrodes on the filament formation in HfO2-based resistive random access memory",

abstract = "The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.",

keywords = "HfO thin film, Metal filament, Oxygen vacancy, Resistive switching mechanism",

author = "Tingting Tan and Tingting Guo and Xiaojing Li and Xi Chen and Liping Feng and Zhengtang Liu",

year = "2015",

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TY - JOUR

T1 - Effects of electrodes on the filament formation in HfO2-based resistive random access memory

AU - Tan, Tingting

AU - Guo, Tingting

AU - Li, Xiaojing

AU - Chen, Xi

AU - Feng, Liping

AU - Liu, Zhengtang

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.

AB - The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.

KW - HfO thin film

KW - Metal filament

KW - Oxygen vacancy

KW - Resistive switching mechanism

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M3 - 文章

AN - SCOPUS:84951850525

SN - 1002-185X

VL - 44

SP - 2642

EP - 2645

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 11

ER -

Effects of electrodes on the filament formation in HfO2-based resistive random access memory

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Effects of electrodes on the filament formation in HfO₂-based resistive random access memory