Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon

Sreyash Sarkar, Tarik Bourouina, Elyes Nefzaoui, Ahmed A. Elsayed, Frederic Marty, Jeremie Drevillon, Yasser M. Sabry, Jiancun Zhao, Yiting Yu, Elodie Richalot, Philippe Basset

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3 引用 (Scopus)

摘要

For the first time, we show that the density of nanostructures on Black Silicon obtained by wafer-level cryogenic plasma processing increases with a high level of doping, extending the spectral range of its very high absorptivity from near-infrared to far-infrared. We have found experimentally and confirmed by simulations that, for highly doped Black Silicon, a high absorptivity is observed till 15 μm. Subsequent processing of SEM images reveals that these noteworthy radiative properties are probably due to particular morphological features of heavily doped Black Silicon at the nano-scale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.

源语言英语
主期刊名THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781728120782
DOI
出版状态已出版 - 9月 2019
活动25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019 - Lecco, 意大利
期限: 25 9月 201927 9月 2019

出版系列

姓名THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems

会议

会议25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019
国家/地区意大利
Lecco
时期25/09/1927/09/19

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