Effect of wet etching parameter on the diameter and length of silicon nanowires

Yang He, Chengyu Jiang, Hengxu Yin, Chen Jun, Weizheng Yuan

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

源语言英语
主期刊名MEMS/NEMS Nano Technology
出版商Trans Tech Publications Ltd
584-588
页数5
ISBN(印刷版)9783037851753
DOI
出版状态已出版 - 2011

出版系列

姓名Key Engineering Materials
483
ISSN(印刷版)1013-9826
ISSN(电子版)1662-9795

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