Effect of Ti3SiC2 doping on critical current density and flux pinning in MgB2

Di Shan; Guo Yan; Lian Zhou; Qingyang Wang; Xiaomei Xiong; Gaofeng Jiao; Guoqing Liu; Hui Shao

doi:10.1016/j.cryogenics.2012.05.013

Effect of Ti₃SiC₂ doping on critical current density and flux pinning in MgB₂

Di Shan, Guo Yan, Lian Zhou, Qingyang Wang, Xiaomei Xiong, Gaofeng Jiao, Guoqing Liu, Hui Shao

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

Ti₃SiC₂ is used as the dopant, which not only provides C source for C substitution for B in the MgB₂ lattice, but also produces more non-superconducting precipitates locating in MgB₂ grain boundaries acting as the pinning centers. Carbon substitution of boron can be confirmed by the (1 0 0) peak of MgB₂ shift behavior with increasing Ti₃SiC₂ doping level. The critical current density (J_c) values are determined by M-H hysteresis loops. In low magnetic fields, the J_c values for the undoped sample are higher than that for the doped samples. However, with increasing magnetic fields, the J_c values for the doped samples are found to be enhanced for MgB_1.9(Ti₃SiC₂)_0.05 and MgB_1.85(Ti₃SiC₂)_0.075. The flux pinning behavior has been investigated and it reveals that the flux pinning force can be improved by Ti₃SiC₂ doping, when the non-superconducting phases uniformly distribute in MgB₂ matrix and they do not depress the intergrain connectivity.

源语言	英语
页（从-至）	482-485
页数	4
期刊	Cryogenics
卷	52
期	10
DOI	https://doi.org/10.1016/j.cryogenics.2012.05.013
出版状态	已出版 - 1 10月 2012

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title = "Effect of Ti3SiC2 doping on critical current density and flux pinning in MgB2",

abstract = "Ti3SiC2 is used as the dopant, which not only provides C source for C substitution for B in the MgB2 lattice, but also produces more non-superconducting precipitates locating in MgB2 grain boundaries acting as the pinning centers. Carbon substitution of boron can be confirmed by the (1 0 0) peak of MgB2 shift behavior with increasing Ti3SiC2 doping level. The critical current density (Jc) values are determined by M-H hysteresis loops. In low magnetic fields, the Jc values for the undoped sample are higher than that for the doped samples. However, with increasing magnetic fields, the Jc values for the doped samples are found to be enhanced for MgB1.9(Ti3SiC2)0.05 and MgB1.85(Ti3SiC2)0.075. The flux pinning behavior has been investigated and it reveals that the flux pinning force can be improved by Ti3SiC2 doping, when the non-superconducting phases uniformly distribute in MgB2 matrix and they do not depress the intergrain connectivity.",

keywords = "Critical current density, Flux pinning, MgB, TiSiC doping",

author = "Di Shan and Guo Yan and Lian Zhou and Qingyang Wang and Xiaomei Xiong and Gaofeng Jiao and Guoqing Liu and Hui Shao",

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T1 - Effect of Ti3SiC2 doping on critical current density and flux pinning in MgB2

AU - Shan, Di

AU - Yan, Guo

AU - Zhou, Lian

AU - Wang, Qingyang

AU - Xiong, Xiaomei

AU - Jiao, Gaofeng

AU - Liu, Guoqing

AU - Shao, Hui

PY - 2012/10/1

Y1 - 2012/10/1

N2 - Ti3SiC2 is used as the dopant, which not only provides C source for C substitution for B in the MgB2 lattice, but also produces more non-superconducting precipitates locating in MgB2 grain boundaries acting as the pinning centers. Carbon substitution of boron can be confirmed by the (1 0 0) peak of MgB2 shift behavior with increasing Ti3SiC2 doping level. The critical current density (Jc) values are determined by M-H hysteresis loops. In low magnetic fields, the Jc values for the undoped sample are higher than that for the doped samples. However, with increasing magnetic fields, the Jc values for the doped samples are found to be enhanced for MgB1.9(Ti3SiC2)0.05 and MgB1.85(Ti3SiC2)0.075. The flux pinning behavior has been investigated and it reveals that the flux pinning force can be improved by Ti3SiC2 doping, when the non-superconducting phases uniformly distribute in MgB2 matrix and they do not depress the intergrain connectivity.

AB - Ti3SiC2 is used as the dopant, which not only provides C source for C substitution for B in the MgB2 lattice, but also produces more non-superconducting precipitates locating in MgB2 grain boundaries acting as the pinning centers. Carbon substitution of boron can be confirmed by the (1 0 0) peak of MgB2 shift behavior with increasing Ti3SiC2 doping level. The critical current density (Jc) values are determined by M-H hysteresis loops. In low magnetic fields, the Jc values for the undoped sample are higher than that for the doped samples. However, with increasing magnetic fields, the Jc values for the doped samples are found to be enhanced for MgB1.9(Ti3SiC2)0.05 and MgB1.85(Ti3SiC2)0.075. The flux pinning behavior has been investigated and it reveals that the flux pinning force can be improved by Ti3SiC2 doping, when the non-superconducting phases uniformly distribute in MgB2 matrix and they do not depress the intergrain connectivity.

KW - Critical current density

KW - Flux pinning

KW - MgB

KW - TiSiC doping

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Effect of Ti3SiC2 doping on critical current density and flux pinning in MgB2

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Effect of Ti₃SiC₂ doping on critical current density and flux pinning in MgB₂