Dielectric properties and relaxation behavior of the indium doped cadmium zinc telluride single crystal

Low frequency dielectric dispersion behavior of the indium doped cadmium zinc telluride single crystal has been investigated. The temperature dependent of dielectric loss shows a broadening peak at high temperatures, which is attributed to thermally activated relaxation process. The large dielectric permittivity can be attributed to the influence of the dc conductivity and the predominance of the dc conduction in low frequency region overshadows the true behavior of the imaginary part of dielectric permittivity. The contribution of dc conduction and ac conduction has also been studied. A polaron theory indicates that the dielectric relaxation of the indium doped cadmium zinc telluride crystal at high temperature is associated with the hopping localized cadmium vacancies and telluride antisites defects. The hopping energy increases from 1.204 eV at 499 K to 1.267 eV at 534 K monotonically, which is close to the thermal activation energy 1.541 eV and dc conductivity activation energy 1.239 eV.