@inproceedings{29a1252459ca41bc9c643ff0426dd443,
title = "Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method",
abstract = "To evaluate the Te inclusions and induced dislocations, batches of as-grown detector-grade CZT wafers with direction of {111} were selected and observed using IR transmission microscope. Size and concentration of Te inclusions were calculated within the crystals. Simultaneously, the dislocation densities were obtained using field emission scanning electron microscope after surface-etching on CZT {111}B surfaces. Morphology of Te inclusion and the induced dislocations configuration were also revealed by cathodeluminescence microscope. The correlation between dislocations density and Te inclusions positioned in CZT crystals was reported. In addition, the dislocations enrichment depends on the size of Te inclusions was discussed by analyzing the dislocations distribution surrounding Te inclusions.",
keywords = "CdZnTe, Dislocations, Etching pits density (EPD), Te inclusion",
author = "Yadong Xu and Yihui He and Lingyan Xu and Tao Wang and Gangqiang Zha and Wanqi Jie",
year = "2012",
doi = "10.1117/12.928176",
language = "英语",
isbn = "9780819492241",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV",
note = "Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV ; Conference date: 13-08-2012 Through 15-08-2012",
}