TY - JOUR
T1 - Cd1-xZnxTe
T2 - Growth and characterization of crystals for x-ray and gamma-ray detectors
AU - Li, Guoqiang
AU - Jie, Wanqi
AU - Hua, Hui
AU - Gu, Zhi
PY - 2003
Y1 - 2003
N2 - The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.
AB - The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd1-xZnxTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd1-xZnxTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd1-xZnxTe. Three sets of Cd1-xZnxTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd0.85Zn0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.
KW - CdZnTe
KW - Characterization
KW - IR transmission
KW - Resistivity
KW - Vertical Bridgman method
UR - http://www.scopus.com/inward/record.url?scp=1842588563&partnerID=8YFLogxK
U2 - 10.1016/S0960-8974(03)90003-9
DO - 10.1016/S0960-8974(03)90003-9
M3 - 文章
AN - SCOPUS:1842588563
SN - 0960-8974
VL - 46
SP - 85
EP - 104
JO - Progress in Crystal Growth and Characterization of Materials
JF - Progress in Crystal Growth and Characterization of Materials
IS - 3
ER -