Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

Hongjiao Lin, Hejun Li, Qingliang Shen, Xiaohong Shi, Xinfa Tian, Lingjun Guo

科研成果: 期刊稿件文章同行评审

27 引用 (Scopus)

摘要

3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.

源语言英语
页(从-至)86-89
页数4
期刊Materials Letters
212
DOI
出版状态已出版 - 1 2月 2018

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