Barriers of Au/CdZnTe with synchrotron radiation

Gangqiang Zha; Tingting Tan; Wenhua Zhang; Wanqi Jie

Barriers of Au/CdZnTe with synchrotron radiation

Gangqiang Zha, Tingting Tan, Wenhua Zhang, Wanqi Jie

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

源语言	英语
页（从-至）	552-554
页数	3
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	28
期	SUPPL.
出版状态	已出版 - 9月 2007

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title = "Barriers of Au/CdZnTe with synchrotron radiation",

abstract = "Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.",

keywords = "CdZnTe, Metal-induced gap states, Schottky barriers SRPES",

author = "Gangqiang Zha and Tingting Tan and Wenhua Zhang and Wanqi Jie",

year = "2007",

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AU - Zha, Gangqiang

AU - Tan, Tingting

AU - Zhang, Wenhua

AU - Jie, Wanqi

PY - 2007/9

Y1 - 2007/9

N2 - Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

AB - Au Schottky contact was deposited on clean CZT(110) and (111) A surfaces by molecular beam epitaxy. Synchrotron radiation photoemission spectroscopy (SRPES) was used to studied the real Schottky barrier of Au/CdZnTe. The real Schottky barrier heights were measured to be 0.738 and 0.566 eV, respectively. Using metal-induced gap states (MIGS) model, the results of experiment were explained.

KW - CdZnTe

KW - Metal-induced gap states

KW - Schottky barriers SRPES

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M3 - 文章

AN - SCOPUS:37349084909

SN - 0253-4177

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JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - SUPPL.

ER -

Barriers of Au/CdZnTe with synchrotron radiation

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