A phase field crystal model simulation of morphology evolution and misfit dislocation generation in nanoheteroepitaxy

J. Zhang, Z. Chen, C. Cheng, Y. X. Wang

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4 引用 (Scopus)

摘要

A phase field crystal (PFC) model is employed to study morphology evolution of nanoheteroepitaxy and misfit dislocation generation when applied with enhanced supercooling, lattice mismatch and substrate vicinal angle conditions. Misfit strain that rises due to lattice mismatch causes rough surfaces or misfit dislocations, deteriorates film properties, hence, efforts taken to reveal their microscopic mechanism are significant for film quality improvement. Uniform islands, instead of misfit dislocations, are developed in subcritical thickness film, serving as a way of strain relief by surface mechanism. Misfit dislocations generate when strain relief by surface mechanism is deficient in higher supercooling, multilayers of misfit dislocations dominate, but the number of layers reduces gradually when the supercooling is further enhanced. Rough surfaces like islands or cuspate pits are developed which is ascribed to lattice mismatch, multilayers of misfit dislocations generate to further enhance lattice mismatch. Layers of misfit dislocations generate at a thickening position at enhanced substrate vicinal angle, this further enhancing the angle leading to sporadic generation of misfit dislocations.

源语言英语
文章编号1750283
期刊Modern Physics Letters B
31
30
DOI
出版状态已出版 - 30 10月 2017

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