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西北工业大学 国内
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A new model for thermally induced redistributions of free carriers in centrosymmetric flexoelectric semiconductor beams
Y. L. Qu
, G. Y. Zhang, X. L. Gao, F. Jin
Xi'an Jiaotong University
Southeast University, Nanjing
Southern Methodist University
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Engineering
Axial Direction
50%
Axial Displacement
50%
Beam Model
50%
Boundary Condition
50%
Deformed Shape
50%
Electric Potential
100%
Illustrates
50%
Kinematic Relation
50%
Simply Supported Beam
50%
Strain Gradient
100%
Temperature Change
100%