TY - GEN
T1 - A model for THz silicon nanotube transistor
AU - Shan, Guangcun
AU - Zhang, Miao
AU - Huang, Wei
PY - 2010
Y1 - 2010
N2 - In this work, a schematic model of single-walled Silicon nanotube (SWSiNT) devices is presented aimed at advancing the understanding of nano-electronic field. The circuit model of one-dimensional SWSiNT devices is firstly proposed. The cutoff frequency of SWSiNT devices is obtained, opening up the possibility of a THz silicon nanotube transistor.
AB - In this work, a schematic model of single-walled Silicon nanotube (SWSiNT) devices is presented aimed at advancing the understanding of nano-electronic field. The circuit model of one-dimensional SWSiNT devices is firstly proposed. The cutoff frequency of SWSiNT devices is obtained, opening up the possibility of a THz silicon nanotube transistor.
UR - http://www.scopus.com/inward/record.url?scp=77951658017&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424615
DO - 10.1109/INEC.2010.5424615
M3 - 会议稿件
AN - SCOPUS:77951658017
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 181
EP - 182
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -