不同沉积速率下微晶硅薄膜的生长行为研究

In view of the growth characteristics of microcrystalline silicon thin films which first undergo amorphous transition layer before crystallization, in this paper, it was attempted to prolong the diffusion time of deposited atoms on the growth surface of thin films by reducing the deposition rate of thin films, in order to promote grain growth. The results show that the deposition rate decreased with the decrease of gas flow. And as the deposition rate decreased, surface roughness decreased obviously and the average grain size improved. Grains which were bigger than 10 nm could be observed in HRTEM photos, which indicated that the decrease of the deposition rate had a great effect on the diffusion of deposited particles on growth surface. At the same time, the change rule of minority carrier lifetime agreed with the change rules of the crystallinity and average grain size, which showed a decisive effect of the microstructure on electrical properties.