Vapor growth of one-dimensional ZnE(E=S, Se) nanowires

Huanyong Li; Wanqi Jie; Peng Xiong; Hongzhi Fu

Vapor growth of one-dimensional ZnE(E=S, Se) nanowires

Huanyong Li, Wanqi Jie, Peng Xiong, Hongzhi Fu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

ZnE(E=S, Se) nanowires were successfully prepared in NiE(E=S, Se)-Zn system via a chemical vapor deposition (CVD) route. As-synthesized ZnE nanowires were characterized by means of XRD, EDS, SEM and PL spectra, which have the zinc-rich composition and the high crystalline quality. The ZnNi alloy was proved to play a key role during ZnE nanowire growth. The redox reaction actived VLS mechanism was found to govern the growth of ZnE nanowire, which bring about a case that the diameter of ZnE nanowires was controlled by the size of NiE nanocrystal.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	36
Issue number	SUPPL. 2
State	Published - Aug 2007

Keywords

II-VI semiconductor
Nanowires
VLS growth mechanism
ZnS
ZnSe

Cite this

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title = "Vapor growth of one-dimensional ZnE(E=S, Se) nanowires",

abstract = "ZnE(E=S, Se) nanowires were successfully prepared in NiE(E=S, Se)-Zn system via a chemical vapor deposition (CVD) route. As-synthesized ZnE nanowires were characterized by means of XRD, EDS, SEM and PL spectra, which have the zinc-rich composition and the high crystalline quality. The ZnNi alloy was proved to play a key role during ZnE nanowire growth. The redox reaction actived VLS mechanism was found to govern the growth of ZnE nanowire, which bring about a case that the diameter of ZnE nanowires was controlled by the size of NiE nanocrystal.",

keywords = "II-VI semiconductor, Nanowires, VLS growth mechanism, ZnS, ZnSe",

author = "Huanyong Li and Wanqi Jie and Peng Xiong and Hongzhi Fu",

year = "2007",

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T1 - Vapor growth of one-dimensional ZnE(E=S, Se) nanowires

AU - Li, Huanyong

AU - Jie, Wanqi

AU - Xiong, Peng

AU - Fu, Hongzhi

PY - 2007/8

Y1 - 2007/8

N2 - ZnE(E=S, Se) nanowires were successfully prepared in NiE(E=S, Se)-Zn system via a chemical vapor deposition (CVD) route. As-synthesized ZnE nanowires were characterized by means of XRD, EDS, SEM and PL spectra, which have the zinc-rich composition and the high crystalline quality. The ZnNi alloy was proved to play a key role during ZnE nanowire growth. The redox reaction actived VLS mechanism was found to govern the growth of ZnE nanowire, which bring about a case that the diameter of ZnE nanowires was controlled by the size of NiE nanocrystal.

AB - ZnE(E=S, Se) nanowires were successfully prepared in NiE(E=S, Se)-Zn system via a chemical vapor deposition (CVD) route. As-synthesized ZnE nanowires were characterized by means of XRD, EDS, SEM and PL spectra, which have the zinc-rich composition and the high crystalline quality. The ZnNi alloy was proved to play a key role during ZnE nanowire growth. The redox reaction actived VLS mechanism was found to govern the growth of ZnE nanowire, which bring about a case that the diameter of ZnE nanowires was controlled by the size of NiE nanocrystal.

KW - II-VI semiconductor

KW - Nanowires

KW - VLS growth mechanism

KW - ZnS

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=36249013254&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:36249013254

SN - 1002-185X

VL - 36

SP - 279

EP - 282

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - SUPPL. 2

ER -

Vapor growth of one-dimensional ZnE(E=S, Se) nanowires

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Keywords

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