Upgradation of low resistance in-doped CdZnTe crystal by annealing

As-grown Indium doped Cd_0.9Zn_0.1 wafer prepared by MVB method was annealed using Cd_1-yZn_y alloy source to control vapor pressure. The results show that after annealing, the concentration homogeneity of the In-doped CdZnTe wafer is improved, and the atomic ratios of Cd, Zn and Te become close to the theoretical stoichiometric proportions, the average IR transmittance increases from 12% to 59%, the resistivity is enhanced from 3.5×10⁶ Ω·cm to 5.7×10⁹ Ω·cm, and the (D⁰, X) peak representing the quality of crystal appears in PL spectrum. These changes indicate that the annealing treatment can commendably upgrade the performance of low resistance CdZnTe crystal in the proper circumstances.