Thermal treatment of detector-grade CdZnTe

Guoqiang Li; Xiaolu Zhang; Wanqi Jie; Chun Hui

doi:10.1016/j.jcrysgro.2006.07.016

Thermal treatment of detector-grade CdZnTe

Guoqiang Li, Xiaolu Zhang, Wanqi Jie, Chun Hui

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

To improve the quality of CdZnTe (CZT) crystal, a thermal treatment was conducted by using Cd_1-yZn_y alloy as an annealing source. Guided by our calculations of the correlations of the partial pressures between CZT crystal and Cd_1-yZn_y alloy, optimized conditions for the gas-solid equilibrium annealing of CZT were experimentally studied. Characterizations revealed that the concentration distribution was uniform, and the defect density was decreased by more than one order of magnitude. The structural and electrical properties of the CZT crystal were evidently improved by this thermal annealing.

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Journal of Crystal Growth
Volume	295
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.07.016
State	Published - 15 Sep 2006

Keywords

A1. Defects
A1. Segregation
A2. Bridgman technique
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2006.07.016

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title = "Thermal treatment of detector-grade CdZnTe",

abstract = "To improve the quality of CdZnTe (CZT) crystal, a thermal treatment was conducted by using Cd1-yZny alloy as an annealing source. Guided by our calculations of the correlations of the partial pressures between CZT crystal and Cd1-yZny alloy, optimized conditions for the gas-solid equilibrium annealing of CZT were experimentally studied. Characterizations revealed that the concentration distribution was uniform, and the defect density was decreased by more than one order of magnitude. The structural and electrical properties of the CZT crystal were evidently improved by this thermal annealing.",

keywords = "A1. Defects, A1. Segregation, A2. Bridgman technique, B2. Semiconducting II-VI materials",

author = "Guoqiang Li and Xiaolu Zhang and Wanqi Jie and Chun Hui",

year = "2006",

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T1 - Thermal treatment of detector-grade CdZnTe

AU - Li, Guoqiang

AU - Zhang, Xiaolu

AU - Jie, Wanqi

AU - Hui, Chun

PY - 2006/9/15

Y1 - 2006/9/15

N2 - To improve the quality of CdZnTe (CZT) crystal, a thermal treatment was conducted by using Cd1-yZny alloy as an annealing source. Guided by our calculations of the correlations of the partial pressures between CZT crystal and Cd1-yZny alloy, optimized conditions for the gas-solid equilibrium annealing of CZT were experimentally studied. Characterizations revealed that the concentration distribution was uniform, and the defect density was decreased by more than one order of magnitude. The structural and electrical properties of the CZT crystal were evidently improved by this thermal annealing.

AB - To improve the quality of CdZnTe (CZT) crystal, a thermal treatment was conducted by using Cd1-yZny alloy as an annealing source. Guided by our calculations of the correlations of the partial pressures between CZT crystal and Cd1-yZny alloy, optimized conditions for the gas-solid equilibrium annealing of CZT were experimentally studied. Characterizations revealed that the concentration distribution was uniform, and the defect density was decreased by more than one order of magnitude. The structural and electrical properties of the CZT crystal were evidently improved by this thermal annealing.

KW - A1. Defects

KW - A1. Segregation

KW - A2. Bridgman technique

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=33748450064&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.07.016

DO - 10.1016/j.jcrysgro.2006.07.016

M3 - 文章

AN - SCOPUS:33748450064

SN - 0022-0248

VL - 295

SP - 31

EP - 35

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Thermal treatment of detector-grade CdZnTe

Abstract

Keywords

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