TY - JOUR
T1 - The effect of chemical polishing treatment on the microstructure, photoelectric properties of CdZnTe polycrystalline films
AU - Li, Yiwei
AU - Wang, Yawei
AU - Zhang, Wenyu
AU - Cao, Kun
AU - Li, Yang
AU - Zha, Gangqiang
AU - Tan, Tingting
N1 - Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2021/3/15
Y1 - 2021/3/15
N2 - In this paper, CdZnTe polycrystalline film grown by the close-spaced sublimation (CSS) was chemically polished. Energy dispersive spectrum (EDS), atomic force microscope (AFM), Raman spectroscopy, current-voltage (I–V) characteristics and current-time (I-T) measurements were used to test the effect of the corrosion time of brominated methanol etching solution (with the ratio of CH3OH:Br2 = 50:1.5) on the structure, surface morphology and photoelectric properties of CdZnTe polycrystalline films. The results indicate that appropriate chemical polishing time can reduce the surface roughness, surface defects and leakage current of CdZnTe film and improve the photoelectric properties of CdZnTe film.
AB - In this paper, CdZnTe polycrystalline film grown by the close-spaced sublimation (CSS) was chemically polished. Energy dispersive spectrum (EDS), atomic force microscope (AFM), Raman spectroscopy, current-voltage (I–V) characteristics and current-time (I-T) measurements were used to test the effect of the corrosion time of brominated methanol etching solution (with the ratio of CH3OH:Br2 = 50:1.5) on the structure, surface morphology and photoelectric properties of CdZnTe polycrystalline films. The results indicate that appropriate chemical polishing time can reduce the surface roughness, surface defects and leakage current of CdZnTe film and improve the photoelectric properties of CdZnTe film.
KW - CdZnTe polycrystalline Film
KW - Chemical polishing
KW - Close-spaced sublimation
KW - Photoelectric performance
UR - http://www.scopus.com/inward/record.url?scp=85097321532&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2020.105608
DO - 10.1016/j.mssp.2020.105608
M3 - 文章
AN - SCOPUS:85097321532
SN - 1369-8001
VL - 124
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 105608
ER -