Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory

Jianfeng Zhao; Hairong Li; Huanqun Li; Qiang Zhao; Haifeng Ling; Jiewei Li; Jinyi Lin; Linghai Xie; Zongqiong Lin; Mingdong Yi; Wei Huang

doi:10.1016/j.dyepig.2018.07.011

Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory

Jianfeng Zhao, Hairong Li, Huanqun Li, Qiang Zhao, Haifeng Ling, Jiewei Li, Jinyi Lin, Linghai Xie, Zongqiong Lin, Mingdong Yi, Wei Huang

Institute of Flexible Electronics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A novel asymmetrical biindolo[2,3-b]quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (∼10¹ at 10⁴ s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.

Original language	English
Pages (from-to)	255-261
Number of pages	7
Journal	Dyes and Pigments
Volume	167
DOIs	https://doi.org/10.1016/j.dyepig.2018.07.011
State	Published - Aug 2019

Keywords

Biindolo[2,3-b]quinoxaline
Charge storage
Hole trapping
Organic transistor memory
Ullmann C-N coupling

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10.1016/j.dyepig.2018.07.011

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@article{b08cec28424642949459417b7fced424,

title = "Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory",

abstract = "A novel asymmetrical biindolo[2,3-b]quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (∼101 at 104 s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.",

keywords = "Biindolo[2,3-b]quinoxaline, Charge storage, Hole trapping, Organic transistor memory, Ullmann C-N coupling",

author = "Jianfeng Zhao and Hairong Li and Huanqun Li and Qiang Zhao and Haifeng Ling and Jiewei Li and Jinyi Lin and Linghai Xie and Zongqiong Lin and Mingdong Yi and Wei Huang",

note = "Publisher Copyright: {\textcopyright} 2018",

year = "2019",

month = aug,

doi = "10.1016/j.dyepig.2018.07.011",

language = "英语",

volume = "167",

pages = "255--261",

journal = "Dyes and Pigments",

issn = "0143-7208",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory

AU - Zhao, Jianfeng

AU - Li, Hairong

AU - Li, Huanqun

AU - Zhao, Qiang

AU - Ling, Haifeng

AU - Li, Jiewei

AU - Lin, Jinyi

AU - Xie, Linghai

AU - Lin, Zongqiong

AU - Yi, Mingdong

AU - Huang, Wei

PY - 2019/8

Y1 - 2019/8

N2 - A novel asymmetrical biindolo[2,3-b]quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (∼101 at 104 s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.

AB - A novel asymmetrical biindolo[2,3-b]quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (∼101 at 104 s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.

KW - Biindolo[2,3-b]quinoxaline

KW - Charge storage

KW - Hole trapping

KW - Organic transistor memory

KW - Ullmann C-N coupling

UR - http://www.scopus.com/inward/record.url?scp=85054456599&partnerID=8YFLogxK

U2 - 10.1016/j.dyepig.2018.07.011

DO - 10.1016/j.dyepig.2018.07.011

M3 - 文章

AN - SCOPUS:85054456599

SN - 0143-7208

VL - 167

SP - 255

EP - 261

JO - Dyes and Pigments

JF - Dyes and Pigments

ER -

Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory

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Keywords

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