Surface passivation of CdZnTe wafers

Wang Xiaoqin; Jie Wanqi; Li Qiang; Gu Zhi

doi:10.1016/j.mssp.2005.11.001

Surface passivation of CdZnTe wafers

Wang Xiaoqin, Jie Wanqi, Li Qiang, Gu Zhi

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The chemical polishing process and the subsequent passivation process of CdZnTe wafers were studied. The treatment effects were tested through XPS analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes. CdZnTe wafers after Br-MeOH etching were passivated with five different passivants respectively. It was found that the surface leakage currents of all CdZnTe wafers passivated with different passivants were reduced by 1-2 orders. CdZnTe wafer passivated in NH₄F/H₂O₂ solution showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO₂, which results in the thickest oxide layer, the most stoichiometric surface and the least leakage current. The surface of CdZnTe wafer is Te-rich after passivated in NH₄F/H₂O₂ or H₂O₂ solution and Cd-rich after passivated in KOH or KOH/H₂O₂ solution.

Original language	English
Pages (from-to)	615-621
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2005.11.001
State	Published - 2005

Keywords

Ohmic contact
Passivation
Stoichiometric ratio
Surface leakage current

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title = "Surface passivation of CdZnTe wafers",

abstract = "The chemical polishing process and the subsequent passivation process of CdZnTe wafers were studied. The treatment effects were tested through XPS analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes. CdZnTe wafers after Br-MeOH etching were passivated with five different passivants respectively. It was found that the surface leakage currents of all CdZnTe wafers passivated with different passivants were reduced by 1-2 orders. CdZnTe wafer passivated in NH4F/H2O2 solution showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO2, which results in the thickest oxide layer, the most stoichiometric surface and the least leakage current. The surface of CdZnTe wafer is Te-rich after passivated in NH4F/H2O2 or H2O2 solution and Cd-rich after passivated in KOH or KOH/H2O2 solution.",

keywords = "Ohmic contact, Passivation, Stoichiometric ratio, Surface leakage current",

author = "Wang Xiaoqin and Jie Wanqi and Li Qiang and Gu Zhi",

year = "2005",

doi = "10.1016/j.mssp.2005.11.001",

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T1 - Surface passivation of CdZnTe wafers

AU - Xiaoqin, Wang

AU - Wanqi, Jie

AU - Qiang, Li

AU - Zhi, Gu

PY - 2005

Y1 - 2005

N2 - The chemical polishing process and the subsequent passivation process of CdZnTe wafers were studied. The treatment effects were tested through XPS analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes. CdZnTe wafers after Br-MeOH etching were passivated with five different passivants respectively. It was found that the surface leakage currents of all CdZnTe wafers passivated with different passivants were reduced by 1-2 orders. CdZnTe wafer passivated in NH4F/H2O2 solution showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO2, which results in the thickest oxide layer, the most stoichiometric surface and the least leakage current. The surface of CdZnTe wafer is Te-rich after passivated in NH4F/H2O2 or H2O2 solution and Cd-rich after passivated in KOH or KOH/H2O2 solution.

AB - The chemical polishing process and the subsequent passivation process of CdZnTe wafers were studied. The treatment effects were tested through XPS analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes. CdZnTe wafers after Br-MeOH etching were passivated with five different passivants respectively. It was found that the surface leakage currents of all CdZnTe wafers passivated with different passivants were reduced by 1-2 orders. CdZnTe wafer passivated in NH4F/H2O2 solution showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO2, which results in the thickest oxide layer, the most stoichiometric surface and the least leakage current. The surface of CdZnTe wafer is Te-rich after passivated in NH4F/H2O2 or H2O2 solution and Cd-rich after passivated in KOH or KOH/H2O2 solution.

KW - Ohmic contact

KW - Passivation

KW - Stoichiometric ratio

KW - Surface leakage current

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U2 - 10.1016/j.mssp.2005.11.001

DO - 10.1016/j.mssp.2005.11.001

M3 - 文章

AN - SCOPUS:33646870610

SN - 1369-8001

VL - 8

SP - 615

EP - 621

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Surface passivation of CdZnTe wafers

Abstract

Keywords

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